Flash Nand

Ryad -  
 Ryad -
Bonjour à tous j'ai un problème, je n'arrive pas à comprendre la procédure de lecture pour une mémoire flash Nand 2G Samsung.........Si vous pouviez me donner des pistes de réflections...........
Merci.
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2 réponses

Ryad
 
Bonjour voici une partie d'un document qui pourrait t'aider.......

At power-on, the device defaults to READ mode. To enter READ mode while in operation,
write the 00h command to the command register, then write 5 ADDRESS cycles,
and conclude with the 30h command.
To determine the progress of the data transfer from the NAND Flash array to the data
register (tR), monitor the R/B# signal or, alternatively, issue a READ STATUS (70h)
command. If the READ STATUS command is used to monitor the data transfer, the user
must reissue the READ (00h) command to receive data output from the data register. See
Figure 65 on page 72 and Figure 66 on page 73 for examples. After the READ command
has been reissued, pulsing the RE# line will result in outputting data, starting from the
initial column address.
A serial page read sequence outputs a complete page of data. After 30h is written, the
page data is transferred to the data register, and R/B# goes LOW during the transfer.
When the transfer to the data register is complete, R/B# returns HIGH. At this point, data
can be read from the device. Starting from the initial column address and going to the
end of the page, read the data by repeatedly pulsing RE# at the maximum tRC rate
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Ryad
 
Bonjour, c'est quoi ton problème précis. Il faudrait te procurer la doc de la flash que tu utilises.
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